Abstract:
Indium Phosphide devices are now entering the mainstream of commercial IC production. Although previously confined to the niche of exotic military applications, InP is well suited to demanding high-speed applications. InP represents a disruptive technology because it can be used to produce both extremely fast electrical as well as optical Ics, and is a bridge to a fundamentally different device paradigm in which signals are manipulated in both the electrical as well as the optical domain.
Our Strategic Report assesses InP in exhaustive detail, giving you all the information you need to make important strategic decisions.
Table of contents:
List of Figures 8
List of Tables.12
1 INTRODUCTION TO THIS REPORT .16
2 TECHNOLOGY ASSESSMENT: EXECUTIVE SUMMARY.20
3 BACKGROUND.22
- 3.1 WHY IS INP IMPORT
- 3.2 APPLICATIONS OF INP-BASED DEVICES 23
- 3.3 ADVANTAGES & DISADVANTAGES OF INP. 24
- 3.3.1 Advantages.25
- 3.3.2 Disadvantages25
- 3.4 COMPARISON OF III-V, SI AND SIGE SEMICONDUCTORS. 26
- 3.5 SUMMARY 33
4 HIGH SPEED ELECTRON DEVICES (2 GHZ TO >100 GHZ).34
- 4.1 INTRODUCTION 34
- 4.2 HETEROJUCTION BIPOLAR TRANSISTORS (HBTS). 35
- 4.2.1 Applications of HBTs35
- 4.2.2 General Considerations Regarding HBTs 38
- 4.2.3 Advantages of InP for HBTs39
- 4.2.4 Design Considerations Effecting HBT and DHBT Performance40
- 4.2.5 Parasitic Effects on Device Performance .42
- 4.2.6 Comparison of InP, GaAs, SiGe and Si Bipolar Devices.49
- 4.2.7 Power Added Efficiency: InP, GaAs, Si, SiGe, GaN, SiC 58
- 4.2.8 InP HBT Reliability and Radiation Resistance58
- 4.3 HIGH-ELECTRON MOBILITY TRANSISTORS (HEMTS) 61
- 4.3.1 Introduction61
- 4.3.2 HEMT Device Operating Characteristics.61
- 4.3.3 HEMT Device Structure.63
- 4.3.4 Material Parameters Effecting Device Performance Characteristics.66
- 4.3.5 Channel Comp66
- 4.3.6 Design Features of HEMTs .67
- 4.3.7 Noise in HEMTs 74
- 4.3.8 Linearity of HEMTs 75
- 4.3.9 HEMT Reliability77
- 4.4 SUMMARY OF INP HEMT ADVANTAGES AND DISADVANTAGES. 79
- 4.5 COMPATIBLE CIRCUIT COMPONENTS 81
- 4.6 METAMORPHIC VS. PSEUDOMORPHIC INP-BASED DEVICES 81
- 4.6.1 MHEMTs 81
- 4.6.2 HBTs on Metamorphic Substrates81
- 4.6.3 Cost Analysis82
5 INP-BASED OPTOELECTRONIC DEVICES .83
- 5.1 INTRODUCTION 83
- 5.2 INP-BASED ALLOYS AND COMPARISON TO GAAS. 85
- 5.3 INP-BASED LASER DEVICES 90
- 5.3.1 Introduction: Types of Solid State Injection Lasers90
- 5.3.2 Quantum Well Lasers .93
- 5.3.3 Solid State Feedback Lasers 101
- 5.3.4 Vertical Cavity Surface Emitting Lasers (VCSELs) .104
- 5.4 PHOTODETECTORS IN THE 1.3 TO 1.5 MICRON RANGE 111
- 5.4.1 Introduction.111
- 5.4.2 Basic Operating Parameters112
- 5.4.3 Photodetector Design115
- 5.5 INTEGRATED OPTICAL CIRCUITS 125
6 INP GROWTH AND PROCESSING131
- 6.1 GROWTH METHODS 131
- 6.1.1 Introduction.131
- 6.1.2 Comparison of GaAs and InP Growth .132
- 6.1.3 New Feedstocks for Group V Elements132
- 6.1.4 Molecular Beam Epitaxy (MBE) .133
- 6.1.5 Organo-Metallic Vapor Phase Epitaxy (OMVPE).136
- 6.1.6 Comparison of MBE and OMCVD Methods.138
- 6.1.7 MBE vs. OMCVD: Manufacturing Cost Comparison.139
- 6.1.8 Future Directions and Opportunities.140
- 6.2 ETCHING METHODS 141
- 6.2.1 Introduction.141
- 6.2.2 Wet Etchants .141
- 6.2.3 Dry Etching.143
7 FUTURE DIRECTION OF INP: PROBLEMS AND OPPORTUNITIES .146
8 INTELLECTUAL PROPERTY ASSESSMENT: EXECUTIVE SUMMARY .149
9 INTRODUCTION & OVERVIEW 151
- 9.1 PATENT DATABASE 152
- 9.2 OVERVIEW OF INP PATENTS. 152
- 9.3 GROWTH AND ASSIGNMENT OF INP-BASED PATENTS. 158
- 9.4 INTERNATIONAL PATENT CLASSIFICATION (IPC) CODES 159
- 9.5 THE UNIVERSE OF III-V RELATED PATENTS 160
- 9.6 EARLY PATENTS AND OVERLAP WITH GAAS AND III-VS 160
10 MAJOR PATENT HOLDERS AND THEIR PORTFOLIOS 165
- 10.1 INTRODUCTION 165
- 10.2 AT&T, BELL LABORATORIES, AND LUCENT TECHNOLOGIES. 165
- 10.2.1 Company Background.165
- 10.2.2 Company Patent Growth 1975-2001166
- 10.2.3 Bell Telephone Laboratories, Incorporated 168
- 10.2.4 AT&T and AT&T Bell Laboratories.172
- 10.2.5 Device Patents Assigned to AT&T179
- 10.2.6 Lucent Tech197
- 10.2.7 Lucent Technologies: Process Related Patents197
- 10.2.8 Lucent Technologies: Device Patents.199
- 10.2.9 Mitsubishi Pat208
- 10.2.10 Mitsubishi: Process & Materials Related Patents208
- 10.2.11 Mitsubishi: Device Patents.212
- 10.2.12 NEC Patents225
- 10.2.13 NEC Process and Materials Related Patents228
- 10.2.14 NEC Device Patents230
- 14.5 CATEGORIES OF EQUIPMENT DEMAND IN THE OPTICAL TELECOM MARKET 349
- 14.5.1 Very Short Reach (VSR) 349
- 14.5.2 Intermediate Reach and Long Reach351
- 14.6 PRODUCTS AND APPLICATIONS: EVOLUTION SCENARIO 356
- 14.7 OPTICAL COMMUNICATIONS ICS: ELECTRICAL IC PRODUCTS. 356
- 14.7.1 Competition from SiGe 357
- 14.8 OPTICAL COMMUNICATIONS ICS: OIC PRODUCTS. 358
- 14.9 OPTICAL COMMUNICATIONS ICS: MARKET SIZE, EVOLUTION, AND GROWTH 362
- 14.9.1 Market Evoluti362
- 14.9.2 Market Size and Growth: Electrical Ics364
- 14.9.3 Market Size and Growth: Optical Devices and Photonic Ics373
15 INP WIRELESS MARKET: MARKET SIZE, EVOLUTION, AND GROWTH 386
- 15.1 INTRODUCTION AND OVERVIEW. 386
- 15.2 MOBILE TELEPHONY MARKET OVERVIEW. 386
- 15.3 3G TELEPHONY. 387
- 15.3.1 Potential Applications of InP in Mobile Telephony.390
- 15.3.2 3G Power Amplifier Technologies390
- 15.3.3 3G Power Amplifier Market Projections.392
16 AUTOMOTIVE MARKET 398
- 16.1 MARKET OVERVIEW. 398
- 16.2 MOBILE RADAR MARKET: SIZE, EVOLUTION AND GROWTH. 399
17 INP-BASED MERCHANT ICS.401
- 17.1 INTRODUCTION 401
- 17.2 D/A & A/D CON
Technologies & Electronics 