A review and analysis of the status of indium phosphide (InP) materials and device technology for electronics applications. Discusses the characteristics and performance of InP-based devices such as HBTs and HEMTs. Identifies major electronic component types and applications, including fiber optic communications and RF/wireless, and projects worldwide markets for each application segment for 2002-2006.

Examines the advantages and disadvantages of using InP-based electronic devices. Tabulates companies, universities, research centers, and government agencies with active InP programs, and provides profiles of selected organizations. Includes an extensive bibliography. An appendix reviews the statues of semiconductor activities, including InP, in the People' s Republic of China.

Table of contents:

1. EXECUTIVE SUMMARY

1.1 Introduction

1.2 Technology Summary

1.3 Component and Applications Summary

1.4 Market Forecast Summary

1.5 Major Players (Companies, Universities/Research Centers, Government Agencies)

1.6 The Report

2. InP BACKGROUND, MATERIAL PROPERTIES, AND PROCESSES

2.1 Early History

2.2 Materials Properties

2.2.1 Physical Properties

2.2.2 Electronic Properties - Bandgap, Breakdown Electric Field, Electron Mobility, Electron Saturated Drift Velocity, Band Structure

2.3 Figures of Merit

2.4 Processes

2.4.1 InP Crystal Growth - Motivation for Development of High-Quality Bulk Inp, Crystal Growth Techniques, History, Present Crystal Growth Methods of Choice, Polycrystalline Growth, Single-Crystal Growth, Semiconducting InP, Semi-Insulating InP

2.4.2 Film Deposition of InP - MOCVD, MOMBE-Related Film Deposition

2.4.3 Doping - Crystals, Epitaxial Layers

2.4.4 Photolithography/Etch - Photolithography, Etch, Summary of Dry Etch Systems

2.4.5 Contact Formation - Schottky Contacts, Ohmic Contacts

3. InP DEVICE CHARACTERISTICS AND PERFORMANCE

3.1 Why InP? A Summary of the Impact of Lattice Match

3.2 Comparison of InP-Based Single-Heterojunction Bipolar Transistors (SHBTs), Double-Heterojunction Bipolar Transistors (DHBTs), and HEMTs

3.2.1 Heterojuntion Bipolar Transistor (HBT)Types and Performance - SHBT, DHBT, General, Key Parameters for High-Frequency HBTs/Circutis

3.2.2 High-Electron-Mobility Transistors (HEMTs) - Key Parameters for High-Frequency HEMTs/Circuits

3.3 Comparison of Key Semiconductor Parameters by Device and Material Type

3.4 Technical Milestones and Remaining Challenges

3.5 Representative InP Device Papers

4. InP-BASED COMPONENT TYPES AND APPLICATIONS

4.1 Major InP-Based Component Types

4.1.1 Component Definitions

4.1.2 Characterization  of Component Types by Device Structure and Application

4.2 Major Applications

4.2.1 Optical Communications Applications

- System Overview - Layer Terminology

- Functional Block Diagrams

- 40-Gb/s Transmitter and Receiver Designs

4.2.2 Wireless Communications Applications

- Broadband Wireless Access Networks, Mobile Telephones, Satellite Systems

4.2.3 Other High-Speed Applications

5. InP COMPONENT MARKET OVERVIEW AND FORECAST

5.1 InP Electronic Component Forecast

5.2 Fiber Optic Applications - Telecom, Datacom

5.3 Mobile Telephone Applications

5.4 Millimeter-Wave Radio Applications

5.5 Other InP Electronic Applications

6. INDUSTRIAL, UNIVERSITY/RESEARCH CENTER, AND GOVERNMENT ACTIVITY

6.1 Industrial Activity

6.1.1 Companies Active in Design, Fabrication, or Characterization of InP-Based Devices

6.1.2 InP-Related Epitaxial Service

6.1.3 InP Substrates

6.1.4 Equipment Vendors

6.1.5 Specialty Gas Vendors

6.2 Universities/Research Centers Active in InP-Related Technology

6.2.1 North America

6.2.2 Asia

6.2.3 Europe

6.3 Government Activity and Funding for InP Technology

6.3.1 North American Government Agencies - U.S., Canada

6.3.2 Asian Government Agencies - China, Japan, Taiwan

6.3.3 European Government Agencies - France, Germany, Sweden

6.3.4 Australian Government Agencies

6.4 Mini-Profiles of Selected Companies and Universities/Research Centers Active in InP Technology - U.S., Canada, France, Germany, Japan